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Carbon-doped high-mobility hole gases on (001) and (110) GaAs

Gerl, Christian ; Schmult, Stefan ; Wurstbauer, Ursula ; Tranitz, H.-P. ; Mitzkus, Christian ; Wegscheider, Werner
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Date of publication of this fulltext: 25 Jan 2010 13:14


Abstract

Since Stormer and Tsang have introduced the two-dimensional hole gas (2DHG) in the GaAs/AlGaAs heterosystem, the choice of suitable dopants was limited to beryllium and silicon over the last 20 years. Both acceptor atoms have significant disadvantages, i.e., either high diffusion rates or a limitation to specific growth directions. Utilizing a carbon filament doping source we prepared ...

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