Go to content
UR Home

All electrical measurement of spin injection in a magnetic p-n junction diode

Chen, PeiFeng ; Moser, Jürgen ; Kotissek, Philipp ; Sadowski, Janusz ; Zenger, Marcus ; Weiss, Dieter ; Wegscheider, Werner
[img]PDF
(360kB) - Repository staff only
Date of publication of this fulltext: 25 Jan 2010 13:34


Abstract

Magnetic p-n junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving electrons from a ferromagnetic injector (Fe), into a bulk semiconductor (n-GaAs) via Schottky contact. For detection, a diluted magnetic semiconductor (p-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the p-n junction.


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons