Annealing-induced transition from a (311)A-oriented Ga0.98Mn0.02As alloy to a GaMnAs/MnAs hybrid structure studied by angle-dependent magnetotransport

Elm, M. T. ; Klar, P. J. ; Heimbrodt, W. ; Wurstbauer, Ursula ; Reinwald, Matthias ; Wegscheider, Werner

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Date of publication of this fulltext: 25 Jan 2010 14:02

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Details

Item type:	Article
Journal or Publication Title:	Journal of Applied Physics
Publisher:	American Institute of Physics
Volume:	103
Number of Issue or Book Chapter:	9
Page Range:	093710
Date:	7 May 2008
Institutions:	Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:	Value Type 10.1063/1.2917414 DOI
Related URLs:	URL URL Type http://link.aip.org/link/?JAPIAU/103/093710/1 Publisher
Classification:	Notation Type 73.61.Ey; 75.50.Pp; 75.47.Pq; 68.55.A-; # 61.72.Cc; 73.50.Jt PACS
Keywords:	annealing, gallium arsenide, gallium compounds, III-V semiconductors, magnetic anisotropy, magnetic epitaxial layers, magnetoresistance, manganese compounds, molecular beam epitaxial growth, semiconductor epitaxial layers, semimagnetic semiconductors
Dewey Decimal Classification:	500 Science > 530 Physics
Status:	Published
Refereed:	Unknown
Created at the University of Regensburg:	Unknown
Item ID:	12505

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Abstract

The angle-dependent behavior of the magneto-resistance of a series of low-temperature molecular beam epitaxy grown Ga0.98Mn0.02As samples on (311)A-GaAs-substrates is studied. The samples are annealed at different temperatures in a range from 300 °C to 500 °C, which leads to a redistribution of the manganese in the sample and finally to the formation of MnAs clusters. As a consequence, the ...

Abstract

The angle-dependent behavior of the magneto-resistance of a series of low-temperature molecular beam epitaxy grown Ga0.98Mn0.02As samples on (311)A-GaAs-substrates is studied. The samples are annealed at different temperatures in a range from 300 °C to 500 °C, which leads to a redistribution of the manganese in the sample and finally to the formation of MnAs clusters. As a consequence, the angle-dependence of the magneto-resistance changes with increasing annealing temperature and vanishes finally at an annealing temperature of 400 °C. The observed anisotropy of the magneto-resistance can be correlated with the magnetic anisotropy of the magnetization. The parameters describing this magnetic anisotropy and their changes due to annealing are extracted from the experimental magneto-resistance data by a fitting procedure. The magnetocrystalline anisotropy of the samples can be described by the sum of cubic and uniaxial contributions. The former are not affected by the annealing whereas the latter change considerably.

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Metadata last modified: 03 Jun 2018 20:00

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