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Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures
Rossler, C., Bichler, Max, Schuh, Dieter, Wegscheider, Werner and Ludwig, S.
(2008)
Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures.
Nanotechnology 19 (16), p. 165201.
Date of publication of this fulltext: 25 Jan 2010 14:03
Article
DOI to cite this document: 10.5283/epub.12508
Abstract
Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/ AlGaAs heterostructure. Quantum point contacts and ( double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon interaction.
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Details
| Item type | Article | ||||
| Journal or Publication Title | Nanotechnology | ||||
| Publisher: | IOP PUBLISHING LTD | ||||
|---|---|---|---|---|---|
| Place of Publication: | BRISTOL | ||||
| Volume: | 19 | ||||
| Number of Issue or Book Chapter: | 16 | ||||
| Page Range: | p. 165201 | ||||
| Date | 23 April 2008 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
| Identification Number |
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| Keywords | ; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Unknown | ||||
| Created at the University of Regensburg | Unknown | ||||
| Item ID | 12508 |
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