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Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

DOI to cite this document:
10.5283/epub.12508
Rossler, C. ; Bichler, Max ; Schuh, Dieter ; Wegscheider, Werner ; Ludwig, S.
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Date of publication of this fulltext: 25 Jan 2010 14:03


Abstract

Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron–phonon interaction.


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