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Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

Rossler, C., Bichler, Max, Schuh, Dieter, Wegscheider, Werner and Ludwig, S. (2008) Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures. Nanotechnology 19 (16), p. 165201.

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Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron–phonon interaction.

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Item type:Article
Date:23 April 2008
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:12508
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