Investigations on unconventional aspects in the quantum Hall regime of narrow gate defined channels

DOI to cite this document:: 10.5283/epub.12628

Horas, J. ; Siddiki, A. ; Moser, Jürgen ; Wegscheider, Werner ; Ludwig, S.

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Date of publication of this fulltext: 01 Feb 2010 13:00

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Abstract

We report on theoretical and experimental investigations of the integer quantized Hall effect in narrow channels at various mobilities. The Hall bars are defined electrostatically in two-dimensional electron systems by biasing metal gates on the surfaces of GaAs/AlGaAs heterostructures. In the low mobility regime the classical Hall resistance line is proportional to the magnetic field as measured ...