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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.12633
Alternative Links zum Volltext:DOI
Zusammenfassung
We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source–drain-voltage for several consecutive electron numbers on the quantum dot. For bias voltages at which excited states become accessible we ...
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