Bimodal statistic on a single dot device

DOI to cite this document:: 10.5283/epub.12633

Fricke, C. ; Hohls, F. ; Wegscheider, Werner ; Haug, Rolf J.

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Date of publication of this fulltext: 01 Feb 2010 13:03

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Abstract

We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source–drain-voltage for several consecutive electron numbers on the quantum dot. For bias voltages at which excited states become accessible we ...