InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices

DOI to cite this document:: 10.5283/epub.12644

Buizert, Christo ; Koppens, Frank H. L. ; Pioro-Ladriere, Michel ; Tranitz, Hans-Peter ; Vink, Ivo T. ; Tarucha, Seigo ; Wegscheider, Werner ; Vandersypen, Lieven M. K.

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Date of publication of this fulltext: 01 Feb 2010 13:16

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Abstract

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the ...