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Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

Kreuzer, Stephan ; Wegscheider, Werner ; Weiss, Dieter
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Date of publication of this fulltext: 08 Feb 2010 13:29


A preparation method for magnetic tunnel junctions with single crystal GaAs(001) barriers is demonstrated. The method is based on an epoxy bond and stop etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness were prepared. The I–V measurements show a pronounced nonlinearity. Their variation with temperature ...


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