Fabrication of single crystal GaAs(001) barriers for magnetic tunnel junctions

DOI to cite this document:: 10.5283/epub.12752

Kreuzer, Stephan ; Wegscheider, Werner ; Weiss, Dieter

PDF
(165kB) - Repository staff only

Date of publication of this fulltext: 08 Feb 2010 13:29

Alternative links to fulltext:DOI

Details

Export bibliographical data

Abstract

A preparation method for magnetic tunnel junctions with single crystal GaAs(001) barriers is demonstrated. The method is based on an epoxy bond and stop etch technique and does not require epitaxial growth of a semiconductor on top of a metal. Stable GaAs tunnel barriers down to 6 nm in thickness were prepared. The I–V measurements show a pronounced nonlinearity. Their variation with temperature ...