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Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers

DOI to cite this document:
10.5283/epub.12756
Schwarz, Ulrich ; Sturm, Evi ; Wegscheider, Werner ; Kümmler, V. ; Lell, Alfred ; Härle, Volker
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Date of publication of this fulltext: 08 Feb 2010 13:45


Abstract

Adapting the Hakki-Paoli method for blue laser diodes we measure gain spectra for (In/Al)GaN on SiC substrate laser diodes in the low carrier density regime. From the measured longitudinal mode spacing we calculate the effective refractive index and can exclude a mode spacing anomaly. We demonstrate that the substrate has a considerable influence on the modal gain.


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