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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.1435
Zusammenfassung
We analyze the effect of weak residual disorder in microstructures defined on high-mobility heterojunctions, where the classical electron motion is ballistic. We parameterize the disorder by its correlation length {\it xi} and the elastic mean free path {\it l}, which can be estimated from microscopic models. For the experimentally relevant case in which {\it xi} is not negligible with ...
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