Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)

URN to cite this document:: urn:nbn:de:bvb:355-epub-149451
DOI to cite this document:: 10.5283/epub.14945

Bach, P. ; Bader, A. S. ; Ruster, C. ; Gould, C. ; Becker, C. R. ; Schmidt, G. ; Molenkamp, L. W. ; Weigand, W. ; Kumpf, C. ; Umbach, E. ; Urban, R. ; Woltersdorf, Georg ; Heinrich, B.

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Date of publication of this fulltext: 19 Jul 2010 13:05

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Abstract

We report the growth of the half-Heusler alloy NiMnSb on InP (001) by molecular-beam epitaxy using a lattice-matched (In,Ga)As buffer. High-resolution x-ray diffraction confirms a high crystalline quality. Spot-profile analysis low-energy electron diffraction measurements show well-defined surface reconstructions. The samples show the expected high Curie temperature and an uniaxial anisotropy.

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