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Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)
Article
Bach, P., Bader, A. S., Ruster, C., Gould, C., Becker, C. R., Schmidt, G., Molenkamp, L. W., Weigand, W., Kumpf, C., Umbach, E., Urban, R., Woltersdorf, Georg and Heinrich, B. (2003) Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001). Applied Physics Letters 83 (3), pp. 521-523.DOI to cite this document: 10.5283/epub.14945
Abstract
We report the growth of the half-Heusler alloy NiMnSb on InP (001) by molecular-beam epitaxy using a lattice-matched (In,Ga)As buffer. High-resolution x-ray diffraction confirms a high crystalline quality. Spot-profile analysis low-energy electron diffraction measurements show well-defined surface reconstructions. The samples show the expected high Curie temperature and an uniaxial anisotropy.
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| Item type | Article | ||||
| Journal or Publication Title | Applied Physics Letters | ||||
| Publisher | American Institute of Physics | ||||
| Volume | 83 | ||||
| Number of Issue or Book Chapter | 3 | ||||
| Page Range | pp. 521-523 | ||||
| Date | July 2003 | ||||
| Date of publication | 19 Jul 2010 13:05 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Chair Professor Back > Group Christian Back | ||||
| Interdisciplinary Subject Network | Not selected | ||||
| Identification Number |
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| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Unknown | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-149451 | ||||
| Item ID | 14945 |
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