Owner only: item control page
Atomistic simulations of self-trapped exciton formation in silicon nanostructures: The transition from quantum dots to nanowires
Wang, Y., Zhang, R. Q., Frauenheim, Th. and Niehaus, Thomas A. (2009) Atomistic simulations of self-trapped exciton formation in silicon nanostructures: The transition from quantum dots to nanowires. J. Phys. Chem. C 113, p. 12935.Date of publication of this fulltext: 20 May 2010 09:03
Article
Alternative links to fulltext
Involved Institutions
Details
| Item type | Article | ||||
| Journal or Publication Title | J. Phys. Chem. C | ||||
| Volume: | 113 | ||||
|---|---|---|---|---|---|
| Page Range: | p. 12935 | ||||
| Date | 2009 | ||||
| Institutions | Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Thomas Niehaus | ||||
| Identification Number |
| ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | No | ||||
| Item ID | 15007 |
Export bibliographical data
Owner only: item control page
Altmetric
Altmetric