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Tunneling magnetoresistance: The relevance of disorder at the interface

Wimmer, Michael ; Richter, Klaus


The effect of disorder on the tunneling magnetoresistance (TMR) of a semiconductor tunnel barrier is investigated using a single‐band model including elastic scattering. We find that disorder can decrease the TMR ratio significantly. Furthermore, we show that impurities close to the barrier interface are most effective in reducing the TMR ratio.

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