Intermittent breakdown of current-oscillation tori in n-type GaAs epitaxial layers

URN to cite this document:: urn:nbn:de:bvb:355-epub-169382
DOI to cite this document:: 10.5283/epub.16938

Margull, U. ; Spangler, J. ; Prettl, Wilhelm

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Date of publication of this fulltext: 04 Oct 2010 12:18

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Abstract

Self-sustained current oscillations in high-purity n-type GaAs epitaxial layers were investigated for intermittent behavior in the control parameter plane constituted by the constant bias voltage and an external magnetic field. Intermittent windows were observed in a sequence of Hopf bifurcations. Quasiperiodic and frequency-locked oscillations were found to follow an intermittency type-II or ...