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Intermittent breakdown of current-oscillation tori in n-type GaAs epitaxial layers

Margull, U., Spangler, J. and Prettl, Wilhelm (1994) Intermittent breakdown of current-oscillation tori in n-type GaAs epitaxial layers. Physical Review B (PRB) 50 (19), pp. 14166-14170.

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Abstract

Self-sustained current oscillations in high-purity n-type GaAs epitaxial layers were investigated for intermittent behavior in the control parameter plane constituted by the constant bias voltage and an external magnetic field. Intermittent windows were observed in a sequence of Hopf bifurcations. Quasiperiodic and frequency-locked oscillations were found to follow an intermittency type-II or ...

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Item type:Article
Date:15 November 1994
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1103/PhysRevB.50.14166DOI
Related URLs:
URLURL Type
http://link.aps.org/doi/10.1103/PhysRevB.50.14166Publisher
Classification:
NotationType
05.45.+b, 72.20.Ht, 72.70.+mPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:16938
Owner only: item control page

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