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Intermittent breakdown of current-oscillation tori in n-type GaAs epitaxial layers

URN to cite this document:
urn:nbn:de:bvb:355-epub-169382
Margull, U. ; Spangler, J. ; Prettl, Wilhelm
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Date of publication of this fulltext: 04 Oct 2010 12:18


Abstract

Self-sustained current oscillations in high-purity n-type GaAs epitaxial layers were investigated for intermittent behavior in the control parameter plane constituted by the constant bias voltage and an external magnetic field. Intermittent windows were observed in a sequence of Hopf bifurcations. Quasiperiodic and frequency-locked oscillations were found to follow an intermittency type-II or ...

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