Self-generated and externally driven current oscillations in n-GaAs

URN to cite this document:: urn:nbn:de:bvb:355-epub-169393
DOI to cite this document:: 10.5283/epub.16939

Spangler, J. ; Prettl, Wilhelm

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Date of publication of this fulltext: 04 Oct 2010 12:19

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Abstract

Experimental investigations of self-generated and externally driven non-linear current oscillations due to impact ionization of shallow impurities in n-type GaAs at low temperatures are presented. The regular relaxation oscillations which appear at the onset of breakdown are destabilized by a magnetic field normal to the epitaxial layer and multifrequency oscillations and chaotic fluctuations ...