Magnetic-field-induced lateral displacements of current filaments in n-GaAs

URN to cite this document:: urn:nbn:de:bvb:355-epub-169462
DOI to cite this document:: 10.5283/epub.16946

Spangler, J. ; Finger, B. ; Wimmer, C. ; Eberle, W. ; Prettl, Wilhelm

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Date of publication of this fulltext: 04 Oct 2010 12:27

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Abstract

The formation of current filaments in n-type GaAs due to the low temperature impurity breakdown has been investigated in crossed electric and magnetic fields with a laser scanning microscope. In a highly compensated, low mobility, epitaxial layer the lateral displacement and stretching of a filament due to the Lorentz force has been observed at currents slightly larger than those required to form ...