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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-169462
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.16946
Alternative Links zum Volltext:DOI
Zusammenfassung
The formation of current filaments in n-type GaAs due to the low temperature impurity breakdown has been investigated in crossed electric and magnetic fields with a laser scanning microscope. In a highly compensated, low mobility, epitaxial layer the lateral displacement and stretching of a filament due to the Lorentz force has been observed at currents slightly larger than those required to form ...
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