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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-169678
- DOI to cite this document:
- 10.5283/epub.16967
Abstract
GaAs/GaMnAs core−shell nanowires were grown by molecular beam epitaxy. The core GaAs nanowires were synthesized under typical nanowire growth conditions using gold as catalyst. For the GaMnAs shell the temperature was drastically reduced to achieve low-temperature growth conditions known to be crucial for high-quality GaMnAs. The GaMnAs shell grows epitaxially on the side facets of the core GaAs ...
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