Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

URN to cite this document:: urn:nbn:de:bvb:355-epub-169689
DOI to cite this document:: 10.5283/epub.16968

Bauer, Benedikt ; Rudolph, Andreas ; Soda, Marcello ; Fontcuberta i Morral, Anna ; Zweck, Josef ; Schuh, Dieter ; Reiger, Elisabeth

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Date of publication of this fulltext: 06 Oct 2010 11:13

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Abstract

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal ...