Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

URN zum Zitieren dieses Dokuments: urn:nbn:de:bvb:355-epub-169689

Bauer, Benedikt, Rudolph, Andreas, Soda, Marcello, Fontcuberta i Morral, Anna, Zweck, Josef, Schuh, Dieter und Reiger, Elisabeth (2010) Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy. Nanotechnology 21 (43), S. 435601.

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Andere URL zum Volltext: http://stacks.iop.org/0957-4484/21/435601

Zusammenfassung

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal ...

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