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Magnetoresistance of n-GaAs at filamentary current flow

Proshin, S. A., Golubev, V. G., Würfl, S., Spangler, J., Schilz, A. and Prettl, Wilhelm (1993) Magnetoresistance of n-GaAs at filamentary current flow. Semiconductor Science and Technology 8 (7), p. 1298.

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Abstract

A large number of sharp structures are observed in the 4.2 K magnetoresistance of n-GaAs biased above impurity breakdown in a regime where current flow is filamentary. Most of the structures cannot be attributed to spectral properties of the semiconductor such as impact excitation of shallow donors or the magnetoimpurity effect. Experimental results give evidence that these structures are caused ...

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Item type:Article
Date:July 1993
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1088/0268-1242/8/7/018DOI
Classification:
NotationType
73.50.Jt; 68.55.Ln; 61.72.uj; 73.61.EyPACS
Keywords:Semiconductors; Surfaces, interfaces and thin films; Condensed matter: structural, mechanical & thermal
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17046
Owner only: item control page

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