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Magnetoresistance of n-GaAs at filamentary current flow

URN to cite this document:
Proshin, S. A. ; Golubev, V. G. ; Würfl, S. ; Spangler, J. ; Schilz, A. ; Prettl, Wilhelm
Date of publication of this fulltext: 11 Oct 2010 12:09


A large number of sharp structures are observed in the 4.2 K magnetoresistance of n-GaAs biased above impurity breakdown in a regime where current flow is filamentary. Most of the structures cannot be attributed to spectral properties of the semiconductor such as impact excitation of shallow donors or the magnetoimpurity effect. Experimental results give evidence that these structures are caused ...


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