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Nonlinear far-infrared photoionization of shallow acceptors in Germanium

URN to cite this document:
urn:nbn:de:bvb:355-epub-170716
Jungwirt, G. ; Prettl, Wilhelm
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Date of publication of this fulltext: 18 Oct 2010 11:36


Abstract

The optical saturation of nonresonant photoionization of shallow acceptors in p-Ge was investigated at low temperatures using a high-power FIR molecular laser. The experimental results were analyzed in terms of a rate equation model. Very small saturation intensities in the order of 10 mW/cm−2 and long free hole recombination times in the range of 10 μs were observed.


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