Nonlinear far-infrared photoionization of shallow acceptors in Germanium

Abstract

The optical saturation of nonresonant photoionization of shallow acceptors in p-Ge was investigated at low temperatures using a high-power FIR molecular laser. The experimental results were analyzed in terms of a rate equation model. Very small saturation intensities in the order of 10 mW/cm−2 and long free hole recombination times in the range of 10 μs were observed.