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Nonlinear effects and transient response of interband and subgap photoconductivity in polycrystalline silicon

URN to cite this document:
urn:nbn:de:bvb:355-epub-173392
DOI to cite this document:
10.5283/epub.17339
Bock, W. ; Prettl, Wilhelm
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Date of publication of this fulltext: 18 Oct 2010 11:50


Abstract

The steady‐state photoconductance and the transient photoresponse of boron‐doped polycrystalline silicon films have been measured as a function of intensity at photon energies above and below the band gap applying several semiconductor lasers. The intensity dependence of the dc photosignal and the transient behavior are distinctly different for interband and subgap excitation. A kinetic model ...

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