Go to content
UR Home

Nonlinear effects and transient response of interband and subgap photoconductivity in polycrystalline silicon

Bock, W. and Prettl, Wilhelm (1989) Nonlinear effects and transient response of interband and subgap photoconductivity in polycrystalline silicon. Journal of Applied Physics 66 (9), p. 4372.

[img]
Preview
PDF
Download (1MB)
Date of publication of this fulltext: 18 Oct 2010 11:50

at publisher (via DOI)


Abstract

The steady‐state photoconductance and the transient photoresponse of boron‐doped polycrystalline silicon films have been measured as a function of intensity at photon energies above and below the band gap applying several semiconductor lasers. The intensity dependence of the dc photosignal and the transient behavior are distinctly different for interband and subgap excitation. A kinetic model ...

plus


Export bibliographical data



Item type:Article
Date:1989
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1063/1.343957DOI
Related URLs:
URLURL Type
http://link.aip.org/link/JAPIAU/v66/i9/p4372/s1Publisher
Classification:
NotationType
73.61.Cw; 73.61.Jc; 73.61.Le; 71.20.-b; 72.40.+w; 42.65.-kPACS
Keywords:SILICON, POLYCRYSTALS, FILMS, DOPED MATERIALS, BORON ADDITIONS, PHOTOCONDUCTIVITY, TRANSIENTS, STEADY−STATE CONDITIONS, NONLINEAR PROBLEMS, INTERBAND TRANSITIONS, MATHEMATICAL MODELS, GRAIN BOUNDARIES, RECOMBINATION, ENERGY−LEVEL DENSITY
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17339
Owner only: item control page

Downloads

Downloads per month over past year

  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons