Effect of impact ionization on the saturation of 1s→2p+ shallow donor transition in n-GaAs

URN to cite this document:: urn:nbn:de:bvb:355-epub-173491
DOI to cite this document:: 10.5283/epub.17349

Weispfenning, M. ; Zach, F. ; Prettl, Wilhelm

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Date of publication of this fulltext: 18 Oct 2010 11:58

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Abstract

The magneto-photoconductivity due to 1s-2p+ optical transitions of shallow donors in n-GaAs has been investigated as a function of intensity for several bias voltages at low temperatures between 2K and 4.2 K. At low intensities a superlinear increase of the photoconductive signal with rising intensity has been observed which gets more pronounced at higher bias voltages and lower temperatures. The ...