Go to content
UR Home

Effect of impact ionization on the saturation of 1s→2p+ shallow donor transition in n-GaAs

URN to cite this document:
urn:nbn:de:bvb:355-epub-173491
DOI to cite this document:
10.5283/epub.17349
Weispfenning, M. ; Zach, F. ; Prettl, Wilhelm
[img]
Preview
PDF
(947kB)
Date of publication of this fulltext: 18 Oct 2010 11:58


Abstract

The magneto-photoconductivity due to 1s-2p+ optical transitions of shallow donors in n-GaAs has been investigated as a function of intensity for several bias voltages at low temperatures between 2K and 4.2 K. At low intensities a superlinear increase of the photoconductive signal with rising intensity has been observed which gets more pronounced at higher bias voltages and lower temperatures. The ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons