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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-173509
- DOI to cite this document:
- 10.5283/epub.17350
Alternative links to fulltext:DOI
Abstract
The spatial pattern of current filaments generated by impurity breakdown has been investigated in a semiconductor for the first time as a function of the magnetic field. Large asymmetries of shallow impurity excited‐state population were observed occurring at opposite edges of a filament normal to the magnetic field. Deformation of filament boundaries evolves at very low field strengths being comparably small to those which destabilize current flow yielding current fluctuation and chaos.
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