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Reconstruction of the spatial structure of current filaments in n‐GaAs in a magnetic field

URN to cite this document:
urn:nbn:de:bvb:355-epub-173509
Brandl, Andreas ; Völcker, M. ; Prettl, Wilhelm
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Date of publication of this fulltext: 18 Oct 2010 11:59


Abstract

The spatial pattern of current filaments generated by impurity breakdown has been investigated in a semiconductor for the first time as a function of the magnetic field. Large asymmetries of shallow impurity excited‐state population were observed occurring at opposite edges of a filament normal to the magnetic field. Deformation of filament boundaries evolves at very low field strengths being comparably small to those which destabilize current flow yielding current fluctuation and chaos.


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