Far-infrared radiation controlled chaos in n-GaAs

Abstract

The effect of far-infrared irradiation on selfgenerated periodic and chaotic current fluctuations in the post-breakdown regimes of n-GaAs has been investigated at liquid helium temperature. In an external magnetic field of 40 mT the material showed a sequence of frequency-locked oscillations being ordered according to the Farey-Tree. Depending on the irradiation intensity a shifting and scaling of the bias voltage ranges of the frequency-locking states has been observed.