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Far-infrared radiation controlled chaos in n-GaAs

URN to cite this document:
urn:nbn:de:bvb:355-epub-173545
Frank, U. ; Brandl, Andreas ; Prettl, Wilhelm
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Date of publication of this fulltext: 18 Oct 2010 12:03


Abstract

The effect of far-infrared irradiation on selfgenerated periodic and chaotic current fluctuations in the post-breakdown regimes of n-GaAs has been investigated at liquid helium temperature. In an external magnetic field of 40 mT the material showed a sequence of frequency-locked oscillations being ordered according to the Farey-Tree. Depending on the irradiation intensity a shifting and scaling of the bias voltage ranges of the frequency-locking states has been observed.


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