High-speed optical detection up to 2.5 Gbit/s with a double polysilicon self-aligned silicon bipolar transistor

Abstract

The photo response of a standard high-speed self-aligned silicon bipolar transistor has been investigated. The photosignal of the base-collector diode is found to consist of at least two current components. Optical detection capabilities are demonstrated by excitation with modulated laser light at 830 nm wavelength up to data rates of 2.5Gbit/s.