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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-173579
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17357
Alternative Links zum Volltext:DOI
Zusammenfassung
The photoconductance of polycrystalline silicon films at photon energies smaller than the band gap has been measured as a function of intensity applying a 1.3 μm wavelength semiconductor laser. The observed photosignal increases superlinearly at low intensities and saturates above about 1.5 W/cm−2. This distinct nonlinearity is caused by a significant energy dependence of optical to thermal cross ...
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