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Nonlinear subgap photoconductivity of polycrystalline silicon

URN to cite this document:
urn:nbn:de:bvb:355-epub-173579
Bock, W. ; Prettl, Wilhelm
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Date of publication of this fulltext: 18 Oct 2010 12:05


Abstract

The photoconductance of polycrystalline silicon films at photon energies smaller than the band gap has been measured as a function of intensity applying a 1.3 μm wavelength semiconductor laser. The observed photosignal increases superlinearly at low intensities and saturates above about 1.5 W/cm−2. This distinct nonlinearity is caused by a significant energy dependence of optical to thermal cross ...

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