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Photoconductive infrared excitation spectrum of GaP diode wafers and application as an infrared imaging system

Moser, K., Brechter, M. and Prettl, Wilhelm (1987) Photoconductive infrared excitation spectrum of GaP diode wafers and application as an infrared imaging system. International Journal of Infrared and Millimeter Waves 8 (11), pp. 1399-1410.

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Abstract

The photoconductive excitation spectrum of GaP:N (ZnTe) diodes was measured irradiating the samples from p- and n-side unter forward and reverse bias conditions. The ionization thresholds of S and Te donors as well as transitions from their ground states to excited bound levels with subsequent ionization by the electric field could be seen. The observed minima in the continuum above the ...

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Item type:Article
Date:1987
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1007/BF01117768DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17487
Owner only: item control page

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