Photoconductive infrared excitation spectrum of GaP diode wafers and application as an infrared imaging system

URN to cite this document:: urn:nbn:de:bvb:355-epub-174874
DOI to cite this document:: 10.5283/epub.17487

Moser, K. ; Brechter, M. ; Prettl, Wilhelm

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Date of publication of this fulltext: 26 Oct 2010 12:05

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Abstract

The photoconductive excitation spectrum of GaP:N (ZnTe) diodes was measured irradiating the samples from p- and n-side unter forward and reverse bias conditions. The ionization thresholds of S and Te donors as well as transitions from their ground states to excited bound levels with subsequent ionization by the electric field could be seen. The observed minima in the continuum above the ...