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Saturation behavior of extrinsic photoconductivity in GaP light emitting diodes at high infrared intensities

URN to cite this document:
urn:nbn:de:bvb:355-epub-174883
DOI to cite this document:
10.5283/epub.17488
Moser, K. ; Prettl, Wilhelm
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Date of publication of this fulltext: 26 Oct 2010 12:05


Abstract

Saturation of extrinsic photoconductivity in GaP:N(Zn, Te) diodes could be achieved by excitation with a TEA-CO2-laser. At wavelengths in the 10 mgrm range intensities of several 100 kW/cm2 being near the damage threshold were applied. Carrier lifetimes of 60 ps at 4.2 K and 200 ps at 77 K could be estimated. The only conceivable mechanism explaining these short time constants is the capture of infrared excited holes by ionized shallow acceptors in the highly compensated p-side of the diode.


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