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Saturation behavior of extrinsic photoconductivity in GaP light emitting diodes at high infrared intensities

Moser, K. and Prettl, Wilhelm (1986) Saturation behavior of extrinsic photoconductivity in GaP light emitting diodes at high infrared intensities. International Journal of Infrared and Millimeter Waves 7 (1), pp. 147-154.

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Abstract

Saturation of extrinsic photoconductivity in GaP:N(Zn, Te) diodes could be achieved by excitation with a TEA-CO2-laser. At wavelengths in the 10 mgrm range intensities of several 100 kW/cm2 being near the damage threshold were applied. Carrier lifetimes of 60 ps at 4.2 K and 200 ps at 77 K could be estimated. The only conceivable mechanism explaining these short time constants is the capture of infrared excited holes by ionized shallow acceptors in the highly compensated p-side of the diode.


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Item type:Article
Date:1986
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1007/BF01011068DOI
Keywords:GaP light emitting diodes - ir-detection - saturation - response time
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17488
Owner only: item control page

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