Moser, K. and Prettl, Wilhelm (1986) Saturation behavior of extrinsic photoconductivity in GaP light emitting diodes at high infrared intensities. International Journal of Infrared and Millimeter Waves 7 (1), pp. 147-154.
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Abstract
Saturation of extrinsic photoconductivity in GaP:N(Zn, Te) diodes could be achieved by excitation with a TEA-CO2-laser. At wavelengths in the 10 mgrm range intensities of several 100 kW/cm2 being near the damage threshold were applied. Carrier lifetimes of 60 ps at 4.2 K and 200 ps at 77 K could be estimated. The only conceivable mechanism explaining these short time constants is the capture of infrared excited holes by ionized shallow acceptors in the highly compensated p-side of the diode.
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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Date: | 1986 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl | ||||
| Identification Number: |
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| Keywords: | GaP light emitting diodes - ir-detection - saturation - response time | ||||
| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Yes, this version has been refereed | ||||
| Created at the University of Regensburg: | Unknown | ||||
| Item ID: | 17488 |
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