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High-speed infrared-to-visible up-conversion by free-to-bound transitions in GaP light emitting diodes

URN to cite this document:
urn:nbn:de:bvb:355-epub-174895
Moser, K. ; Eisfeld, W. ; Penzenstadler, W. ; Prettl, Wilhelm
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Date of publication of this fulltext: 26 Oct 2010 12:07


Abstract

In GaP:N (Zn,Te) light emitting diodes electroluminescence and photoluminescence have been excited at 4.2K by a Q-switched CO2 laser and a pulsed N2 laser, respectively. In the luminescence spectral transitions of free holes to bound donor states could be identified, being responsible for the fast radiative decay on a nanosecond timescale.


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