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High-speed infrared-to-visible up-conversion by free-to-bound transitions in GaP light emitting diodes

Moser, K., Eisfeld, W., Penzenstadler, W. and Prettl, Wilhelm (1985) High-speed infrared-to-visible up-conversion by free-to-bound transitions in GaP light emitting diodes. Journal of Physics D: Applied Physics 18 (11), pp. 2303-2308.

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Abstract

In GaP:N (Zn,Te) light emitting diodes electroluminescence and photoluminescence have been excited at 4.2K by a Q-switched CO2 laser and a pulsed N2 laser, respectively. In the luminescence spectral transitions of free holes to bound donor states could be identified, being responsible for the fast radiative decay on a nanosecond timescale.


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Item type:Article
Date:17 November 1985
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1088/0022-3727/18/11/020DOI
Classification:
NotationType
85.60.Jb; 42.65.KyPACS
Keywords:Electronics and devices; Optics, quantum optics and lasers
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17489
Owner only: item control page

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