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Infrared spectral distribution of photoconductivity and up‐conversion in GaP light emitting diodes

Moser, K., Wahl, S., Eisfeld, W. and Prettl, Wilhelm (1985) Infrared spectral distribution of photoconductivity and up‐conversion in GaP light emitting diodes. Journal of Applied Physics 57 (12), p. 5438.

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Abstract

The spectral distribution of photoconductivity and infrared excited electroluminescence has been determined in GaP light emitting diodes at low temperatures by conventional infrared spectroscopic techniques. The observed photoresponse was found to be caused by ionization of shallow donors only, showing a peak sensitivity of 20 mA/W at 13‐μm wavelength. Spectral structures for photon energies ...

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Item type:Article
Date:1985
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1063/1.334819DOI
Related URLs:
URLURL Type
http://link.aip.org/link/JAPIAU/v57/i12/p5438/s1Publisher
Classification:
NotationType
72.40.+w; 78.40.Fy; 78.60.Fi; 85.60.DwPACS
Keywords:PHOTOCONDUCTIVITY, INFRARED SPECTRA, GALLIUM ARSENIDES, ELECTROLUMINESCENCE, BINDING ENERGY, DONORS, QUANTUM EFFICIENCY, LIGHT EMITTING DIODES
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17491
Owner only: item control page

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