Infrared spectral distribution of photoconductivity and up‐conversion in GaP light emitting diodes

URN to cite this document:: urn:nbn:de:bvb:355-epub-174910
DOI to cite this document:: 10.5283/epub.17491

Moser, K. ; Wahl, S. ; Eisfeld, W. ; Prettl, Wilhelm

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Date of publication of this fulltext: 26 Oct 2010 12:09

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Abstract

The spectral distribution of photoconductivity and infrared excited electroluminescence has been determined in GaP light emitting diodes at low temperatures by conventional infrared spectroscopic techniques. The observed photoresponse was found to be caused by ionization of shallow donors only, showing a peak sensitivity of 20 mA/W at 13‐μm wavelength. Spectral structures for photon energies ...