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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-174910
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17491
Alternative Links zum Volltext:DOI
Zusammenfassung
The spectral distribution of photoconductivity and infrared excited electroluminescence has been determined in GaP light emitting diodes at low temperatures by conventional infrared spectroscopic techniques. The observed photoresponse was found to be caused by ionization of shallow donors only, showing a peak sensitivity of 20 mA/W at 13‐μm wavelength. Spectral structures for photon energies ...
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