Go to content
UR Home

High-speed photoconductivity of GaP light-emitting diodes at liquid-nitrogen temperature

URN to cite this document:
urn:nbn:de:bvb:355-epub-174927
Moser, K. ; Eisfeld, W. ; Prettl, Wilhelm
[img]
Preview
PDF
(146kB)
Date of publication of this fulltext: 26 Oct 2010 12:09


Abstract

In GaP : N (Zn,Te) light-emitting diodes, extrinsic photoconductivity was excited by modelocked TEA CO2 laser pulses at liquid-nitrogen temperature, showing a current sensitivity of 2.10−5 A/W and a response time of the order of 0.5 ns.


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons