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High-speed photoconductivity of GaP light-emitting diodes at liquid-nitrogen temperature

Moser, K., Eisfeld, W. and Prettl, Wilhelm (1985) High-speed photoconductivity of GaP light-emitting diodes at liquid-nitrogen temperature. Infrared Physics 25 (4), pp. 659-660.

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Abstract

In GaP : N (Zn,Te) light-emitting diodes, extrinsic photoconductivity was excited by modelocked TEA CO2 laser pulses at liquid-nitrogen temperature, showing a current sensitivity of 2.10−5 A/W and a response time of the order of 0.5 ns.


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Item type:Article
Date:July 1985
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1016/0020-0891(85)90023-5DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17492
Owner only: item control page

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