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High‐speed photoconductivity and infrared to visible up‐conversion in GaP light‐emitting diodes

Moser, K., Eisfeld, W., Werling, U., Wahl, S. and Prettl, Wilhelm (1984) High‐speed photoconductivity and infrared to visible up‐conversion in GaP light‐emitting diodes. Applied Physics Letters 45 (7), p. 711.

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Abstract

In GaP:N (Zn,Te) light‐emitting diodes extrinsic photoconductivity and infrared to visible up‐conversion have been investigated by short laser pulses at 10‐μm wavelength. A time constant of the order of 1 ns was observed indicating that free infrared excited hole to bound donor recombination yields the fast response.


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Item type:Article
Date:1984
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1063/1.95390DOI
Related URLs:
URLURL Type
http://link.aip.org/link/APPLAB/v45/i7/p711/s1Publisher
Classification:
NotationType
72.40.+w; 72.20.Jv; 85.60.Jb; 78.60.FiPACS
Keywords:GALLIUM PHOSPHIDES, HOLES, RECOMBINATION, PHOTOCONDUCTIVITY, ELECTROLUMINESCENCE, LIGHT EMITTING DIODES, ZINC, TELLURIUM, LIQUID PHASE EPITAXY, LASER RADIATION, IMAGE FORMING, INFRARED RADIATION, VISIBLE RADIATION, IMPURITIES, PHOTOIONIZATION
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17498
Owner only: item control page

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