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High‐speed photoconductivity and infrared to visible up‐conversion in GaP light‐emitting diodes
Moser, K., Eisfeld, W., Werling, U., Wahl, S. and Prettl, Wilhelm (1984) High‐speed photoconductivity and infrared to visible up‐conversion in GaP light‐emitting diodes. Applied Physics Letters 45 (7), p. 711.Date of publication of this fulltext: 26 Oct 2010 12:13
Article
DOI to cite this document: 10.5283/epub.17498
Abstract
In GaP:N (Zn,Te) light‐emitting diodes extrinsic photoconductivity and infrared to visible up‐conversion have been investigated by short laser pulses at 10‐μm wavelength. A time constant of the order of 1 ns was observed indicating that free infrared excited hole to bound donor recombination yields the fast response.
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| Item type | Article | ||||
| Journal or Publication Title | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
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| Volume: | 45 | ||||
| Number of Issue or Book Chapter: | 7 | ||||
| Page Range: | p. 711 | ||||
| Date | 1984 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl | ||||
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| Classification |
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| Keywords | GALLIUM PHOSPHIDES, HOLES, RECOMBINATION, PHOTOCONDUCTIVITY, ELECTROLUMINESCENCE, LIGHT EMITTING DIODES, ZINC, TELLURIUM, LIQUID PHASE EPITAXY, LASER RADIATION, IMAGE FORMING, INFRARED RADIATION, VISIBLE RADIATION, IMPURITIES, PHOTOIONIZATION | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Unknown | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-174983 | ||||
| Item ID | 17498 |
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