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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-174983
- DOI to cite this document:
- 10.5283/epub.17498
Abstract
In GaP:N (Zn,Te) light‐emitting diodes extrinsic photoconductivity and infrared to visible up‐conversion have been investigated by short laser pulses at 10‐μm wavelength. A time constant of the order of 1 ns was observed indicating that free infrared excited hole to bound donor recombination yields the fast response.
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