High‐speed photoconductivity and infrared to visible up‐conversion in GaP light‐emitting diodes

Abstract

In GaP:N (Zn,Te) light‐emitting diodes extrinsic photoconductivity and infrared to visible up‐conversion have been investigated by short laser pulses at 10‐μm wavelength. A time constant of the order of 1 ns was observed indicating that free infrared excited hole to bound donor recombination yields the fast response.