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High‐speed photoconductivity and infrared to visible up‐conversion in GaP light‐emitting diodes

URN to cite this document:
urn:nbn:de:bvb:355-epub-174983
DOI to cite this document:
10.5283/epub.17498
Moser, K. ; Eisfeld, W. ; Werling, U. ; Wahl, S. ; Prettl, Wilhelm
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Date of publication of this fulltext: 26 Oct 2010 12:13


Abstract

In GaP:N (Zn,Te) light‐emitting diodes extrinsic photoconductivity and infrared to visible up‐conversion have been investigated by short laser pulses at 10‐μm wavelength. A time constant of the order of 1 ns was observed indicating that free infrared excited hole to bound donor recombination yields the fast response.


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