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Power broadening and nonlinear FIR magneto-photoconductivity in n-GaAs

Prettl, Wilhelm, Vass, A., Allan, G. R. and Pidgeon, C. (1983) Power broadening and nonlinear FIR magneto-photoconductivity in n-GaAs. International Journal of Infrared and Millimeter Waves 4 (4), pp. 561-574.

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The saturation of the photoconductivity due to 1s-2p+ shallow donor transitions in n-GaAs has been investigated using a high power cw-FIR-laser. Magnetic field strengths were chosen in such a way that 2p+ energy levels were either below or above the N=0 conduction band Landau level. In the former case 1s-p+ transitions are found to be inhomogeneously broadened with a saturation intensity as low ...


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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
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Keywords:semiconductors - epitaxial GaAs - shallow donors - nonlinear photoconductivity - power broadening
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17502
Owner only: item control page


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