Power broadening and nonlinear FIR magneto-photoconductivity in n-GaAs

URN to cite this document:: urn:nbn:de:bvb:355-epub-175026
DOI to cite this document:: 10.5283/epub.17502

Prettl, Wilhelm ; Vass, A. ; Allan, G. R. ; Pidgeon, C.

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Date of publication of this fulltext: 26 Oct 2010 12:16

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Abstract

The saturation of the photoconductivity due to 1s-2p+ shallow donor transitions in n-GaAs has been investigated using a high power cw-FIR-laser. Magnetic field strengths were chosen in such a way that 2p+ energy levels were either below or above the N=0 conduction band Landau level. In the former case 1s-p+ transitions are found to be inhomogeneously broadened with a saturation intensity as low ...