Impact ionization induced negative far-infrared photoconductivity inn-GaAs

URN to cite this document:: urn:nbn:de:bvb:355-epub-175109
DOI to cite this document:: 10.5283/epub.17510

Schöll, E. ; Heisel, W. ; Prettl, Wilhelm

Preview

PDF
(610kB)

Date of publication of this fulltext: 26 Oct 2010 12:19

Alternative links to fulltext:DOI

Details

Preview

Export bibliographical data

Abstract

Far-infrared photoconductivity ofn-GaAs epitaxial layers showing impact ionization breakdown has been investigated by molecular lasers at photon energies below the 1s-2p shallow donor transition energy. Negative photoconductivity was observed if a magnetic field was applied to the crystals and if impact ionization of donors by the electric bias field was the dominant electron excitation ...