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Impact ionization induced negative far-infrared photoconductivity inn-GaAs

URN to cite this document:
urn:nbn:de:bvb:355-epub-175109
Schöll, E. ; Heisel, W. ; Prettl, Wilhelm
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Date of publication of this fulltext: 26 Oct 2010 12:19


Abstract

Far-infrared photoconductivity ofn-GaAs epitaxial layers showing impact ionization breakdown has been investigated by molecular lasers at photon energies below the 1s-2p shallow donor transition energy. Negative photoconductivity was observed if a magnetic field was applied to the crystals and if impact ionization of donors by the electric bias field was the dominant electron excitation ...

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