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Far-infrared absorption in amorphous III-V compound semiconductors

Prettl, Wilhelm, Shevchik, N. J. and Cardona, M. (1973) Far-infrared absorption in amorphous III-V compound semiconductors. physica status solidi b 59 (1), pp. 241-249.

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Abstract

The infrared spectra of amorphous films of GaP, GaAs, GaSb, InAs, and Ge prepared by sputtering have been measured from 10 to 4000 cm−1. The absorption spectra in the region of the “optical” phonon frequencies show similarities to the phonon density of states as deduced from Raman scattering but the absorption becomes much smaller at low frequencies. It is shown that while the coupling constant ...

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Item type:Article
Date:1 September 1973
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Identification Number:
ValueType
10.1002/pssb.2220590122DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Unknown
Item ID:17568
Owner only: item control page

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