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Far-infrared absorption in amorphous III-V compound semiconductors

URN to cite this document:
urn:nbn:de:bvb:355-epub-175688
Prettl, Wilhelm ; Shevchik, N. J. ; Cardona, M.
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Date of publication of this fulltext: 26 Oct 2010 12:34


Abstract

The infrared spectra of amorphous films of GaP, GaAs, GaSb, InAs, and Ge prepared by sputtering have been measured from 10 to 4000 cm−1. The absorption spectra in the region of the “optical” phonon frequencies show similarities to the phonon density of states as deduced from Raman scattering but the absorption becomes much smaller at low frequencies. It is shown that while the coupling constant ...

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