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- URN to cite this document:
- urn:nbn:de:bvb:355-epub-18378
- DOI to cite this document:
- 10.5283/epub.1837
Abstract
A three barrier resonant tunneling structure in which the two quantum wells are formed by a magnetic semiconductor is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases. The requirements for large magnetocurrent are ...
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