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Resonant tunneling magneto resistance in coupled quantum wells

URN to cite this document:
urn:nbn:de:bvb:355-epub-18378
DOI to cite this document:
10.5283/epub.1837
Ertler, Christian ; Fabian, Jaroslav
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Date of publication of this fulltext: 05 Aug 2009 13:33


Abstract

A three barrier resonant tunneling structure in which the two quantum wells are formed by a magnetic semiconductor is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases. The requirements for large magnetocurrent are ...

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