Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

Moser, Jürgen, Zenger, Marcus, Gerl, Christian, Schuh, Dieter, Meier, R., Chen, PeiFeng, Bayreuther, Günther, Wegscheider, Werner, Weiss, Dieter, Lai, C., Huang, R., Kosuth, M. und Ebert, H. (2006) Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions. Applied Physics Letters 89, S. 162106.

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Zusammenfassung

We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion ...