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- DOI to cite this document:
- 10.5283/epub.1843
Abstract
The authors investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance (TMR) effect was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and is observable at room temperature. If an epitaxial Fe/GaAs (001) interface is involved, the tunnel junction exhibits a bias dependent ...

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