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Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

DOI to cite this document:
Moser, Jürgen ; Zenger, Marcus ; Gerl, Christian ; Schuh, Dieter ; Meier, R. ; Chen, PeiFeng ; Bayreuther, Günther ; Wegscheider, Werner ; Weiss, Dieter ; Lai, C. ; Huang, R. ; Kosuth, M. ; Ebert, H.
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Date of publication of this fulltext: 05 Aug 2009 13:33


We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion ...


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