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Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling in Fe/GaAs/Au Tunnel Junctions

URN to cite this document:
urn:nbn:de:bvb:355-epub-18920
DOI to cite this document:
10.5283/epub.1892
Moser, Jürgen ; Matos-Abiague, Alex ; Schuh, Dieter ; Wegscheider, Werner ; Fabian, Jaroslav ; Weiss, Dieter
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Date of publication of this fulltext: 05 Aug 2009 13:34



Abstract

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.


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