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Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling in Fe/GaAs/Au Tunnel Junctions

Moser, Jürgen, Matos-Abiague, Alex, Schuh, Dieter, Wegscheider, Werner, Fabian, Jaroslav and Weiss, Dieter (2007) Tunneling Anisotropic Magnetoresistance and Spin-Orbit Coupling in Fe/GaAs/Au Tunnel Junctions. Physical Review Letters (PRL) 99 (5), 056601.

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Date of publication of this fulltext: 05 Aug 2009 13:34

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Abstract

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.


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Item type:Article
Date:December 2007
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss
Projects:SFB 689: Spinphänomene in reduzierten Dimensionen
Identification Number:
ValueType
cond-mat?papernum=0611406arXiv ID
10.1103/PhysRevLett.99.056601DOI
Classification:
NotationType
72.25.Dc, 75.47.−mPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:1892
Owner only: item control page

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