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Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

DOI to cite this document:
10.5283/epub.1913
Bel'kov, V. ; Ganichev, Sergey ; Schneider, Petra ; Back, Christian ; Oestreich, M. ; Rudolf, J. ; Hägele, D. ; Golub, L. ; Wegscheider, Werner ; Prettl, Wilhelm
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Date of publication of this fulltext: 05 Aug 2009 13:34


Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.


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