Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

DOI to cite this document:: 10.5283/epub.1913

Bel'kov, V. ; Ganichev, Sergey ; Schneider, Petra ; Back, Christian

; Oestreich, M.

; Rudolf, J. ; Hägele, D.

; Golub, L.

; Wegscheider, Werner ; Prettl, Wilhelm

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Date of publication of this fulltext: 05 Aug 2009 13:34

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Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-hand excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account Spin splitting of conduction and valence bands. (C) 2003 Elsevier Ltd. All rights reserved.

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