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Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells
Bel'kov, V., Ganichev, Sergey, Schneider, Petra, Back, Christian
, Oestreich, M.
, Rudolf, J., Hägele, D.
, Golub, L.
, Wegscheider, Werner und Prettl, Wilhelm
(2003)
Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells.
Solid State Communications 128 (8), S. 283-286.
Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:34
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.1913
Zusammenfassung
We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-hand excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account Spin splitting of conduction and valence bands. (C) 2003 Elsevier Ltd. All rights reserved.
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