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Abstract
The magnetization of a thin Fe film epitaxially grown on GaAs(0 0 1)-4×6 was studied at different depths from the metal/semiconductor interface using a single layer of Fe0.5Co0.5 as a marker layer through a double-wedge Fe film. By measuring the X-ray magnetic circular dichroism spectroscopy at the L2,3 of Co, the magnetic response of the film could be sensed at different distances from the ...
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