Magnetization profile at the Fe/GaAs(001)-4x6 interface

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.1915

Giovanelli, Luca ; Tian, C. ; Gastelois, P. ; Panaccione, G. ; Fabrizioli, M. ; Hochstrasser, M. ; Galaktionov, M. ; Back, Christian ; Rossi, G.

PDF
(217kB) - Nur für Mitarbeiter des Archivs

Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:34

Alternative Links zum Volltext:DOI Verlag

Details

Bibliographische Daten exportieren

Zusammenfassung

The magnetization of a thin Fe film epitaxially grown on GaAs(0 0 1)-4×6 was studied at different depths from the metal/semiconductor interface using a single layer of Fe0.5Co0.5 as a marker layer through a double-wedge Fe film. By measuring the X-ray magnetic circular dichroism spectroscopy at the L2,3 of Co, the magnetic response of the film could be sensed at different distances from the ...