Go to content
UR Home

Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V)

URN to cite this document:
DOI to cite this document:
Ouardi, Siham ; Fecher, Gerhard H. ; Balke, Benjamin ; Kozina, Xenia ; Stryganyuk, Gregory ; Felser, Claudia ; Lowitzer, Stephan ; Koedderitzsch, Diemo ; Ebert, Hubert ; Ikenaga, Eiji
Date of publication of this fulltext: 21 Feb 2011 07:58


The substitutional series of Heusler compounds NiTi1−xMxSn (where M=Sc,V and 0<x≤0.2) were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons