Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V)

URN to cite this document:: urn:nbn:de:bvb:355-epub-196786
DOI to cite this document:: 10.5283/epub.19678

Ouardi, Siham ; Fecher, Gerhard H. ; Balke, Benjamin ; Kozina, Xenia ; Stryganyuk, Gregory ; Felser, Claudia ; Lowitzer, Stephan ; Koedderitzsch, Diemo ; Ebert, Hubert ; Ikenaga, Eiji

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Date of publication of this fulltext: 21 Feb 2011 07:58

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Abstract

The substitutional series of Heusler compounds NiTi1−xMxSn (where M=Sc,V and 0<x≤0.2) were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and ...