Magnitude and sign control of lithography-induced uniaxial anisotropy in ultra-thin (Ga,Mn)As wires

URN to cite this document:: urn:nbn:de:bvb:355-epub-198907
DOI to cite this document:: 10.5283/epub.19890

Shiogai, Junichi ; Schuh, Dieter ; Wegscheider, Werner ; Kohda, M. ; Nitta, J. ; Weiss, Dieter

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Date of publication of this fulltext: 24 Feb 2011 14:26

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Abstract

We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-μm-wide (Ga,Mn)As wires, oriented in [110] and [1math0] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at ...