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Spin-galvanic effect and spin orientation by current in non-magnetic semiconductors

Ganichev, Sergey (2006) Spin-galvanic effect and spin orientation by current in non-magnetic semiconductors. International Journal of Modern Physics B. (Submitted)

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Date of publication of this fulltext: 05 Aug 2009 13:36

Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/Int_J_Modern_Phys_2006_to_be_published.pdf


Abstract

The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in low dimensional semiconductor structures are reviewed. Both effect are caused by asymmetric spin relaxation in systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian.


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Item type:Article
Date:2006
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Keywords:spin-galvanic effect; spin polarization; spin splitting; terahertz
Dewey Decimal Classification:500 Science > 530 Physics
Status:Submitted
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2140
Owner only: item control page

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