Ganichev, Sergey (2006) Spin-galvanic effect and spin orientation by current in non-magnetic semiconductors. International Journal of Modern Physics B. (Submitted)
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Abstract
The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in low dimensional semiconductor structures are reviewed. Both effect are caused by asymmetric spin relaxation in systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian.
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| Item type: | Article |
|---|---|
| Date: | 2006 |
| Institutions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Keywords: | spin-galvanic effect; spin polarization; spin splitting; terahertz |
| Dewey Decimal Classification: | 500 Science > 530 Physics |
| Status: | Submitted |
| Refereed: | Yes, this version has been refereed |
| Created at the University of Regensburg: | Yes |
| Item ID: | 2140 |
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