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Spin-galvanic effect and spin orientation by current in non-magnetic semiconductors

URN to cite this document:
urn:nbn:de:bvb:355-epub-21406
DOI to cite this document:
10.5283/epub.2140
Ganichev, Sergey
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Date of publication of this fulltext: 05 Aug 2009 13:36


Abstract

The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in low dimensional semiconductor structures are reviewed. Both effect are caused by asymmetric spin relaxation in systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian.


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