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Demonstration of Rashba spin splitting in GaN-based heterostructures

URN to cite this document:
urn:nbn:de:bvb:355-epub-21487
DOI to cite this document:
10.5283/epub.2148
Weber, Wolfgang ; Ganichev, Sergey ; Kvon, Z. D. ; Belkov, Vassilij ; Golub, Leonid ; Danilov, Sergey ; Weiss, Dieter ; Prettl, Wilhelm ; Cho, Hyun-Ick ;
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Date of publication of this fulltext: 05 Aug 2009 13:36


Abstract

The circular photogalvanic effect, induced by infrared radiation, has been observed in (0001)-oriented n-GaN low dimensional structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin splitting of the conduction band in k space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin splitting, caused by the built-in asymmetry at the AlGaN/GaN interface. (c) 2005 American Institute of Physics.


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