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Spin galvanic effect due to optical spin orientation in n-type GaAs quantum well structures

URN to cite this document:
urn:nbn:de:bvb:355-epub-21670
DOI to cite this document:
10.5283/epub.2167
Ganichev, Sergey ; Schneider, Petra ; Belkov, Vassilij ; Ivchenko, Eougenious ; Tarasenko, Sergey ; Wegscheider, Werner ; Weiss, Dieter ; Schuh, Dieter ; Clarke, D. ; Merrick, M. ; Murdin, B. ; Murzyn, P. ; Phillips, P. ; Pidgeon, C. ; Beregulin, Eugene ; Prettl, Wilhelm
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Date of publication of this fulltext: 05 Aug 2009 13:37



Abstract

Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect ~SGE! has been
unambiguously observed in ~001!-grown n-type GaAs quantum well structures in the absence of any external
magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the
free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed,
which is in good agreement with experimental findings.


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