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Spin galvanic effect due to optical spin orientation in n-type GaAs quantum well structures
Ganichev, Sergey, Schneider, Petra, Belkov, Vassilij, Ivchenko, Eougenious, Tarasenko, Sergey, Wegscheider, Werner, Weiss, Dieter
, Schuh, Dieter, Clarke, D., Merrick, M., Murdin, B., Murzyn, P., Phillips, P., Pidgeon, C., Beregulin, Eugene und Prettl, Wilhelm
(2003)
Spin galvanic effect due to optical spin orientation in n-type GaAs quantum well structures.
Physical review B: Condensed matter and materials physics 68, 081302(R).
Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:37
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DOI zum Zitieren dieses Dokuments: 10.5283/epub.2167
Zusammenfassung
Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect (SGE) has been unambiguously observed in (001)-grown n-type GaAs quantum well structures in the absence of any external magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed, which is in good agreement with experimental findings.
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