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Spin galvanic effect due to optical spin orientation in n-type GaAs quantum well structures

Ganichev, Sergey, Schneider, Petra, Belkov, Vassilij, Ivchenko, Eougenious, Tarasenko, Sergey, Wegscheider, Werner, Weiss, Dieter, Schuh, Dieter, Clarke, D., Merrick, M., Murdin, B., Murzyn, P., Phillips, P., Pidgeon, C., Beregulin, Eugene and Prettl, Wilhelm (2003) Spin galvanic effect due to optical spin orientation in n-type GaAs quantum well structures. Physical review B: Condensed matter and materials physics 68, 081302(R).

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/PRB_Rapid2003p08081302R_sge_optical.pdf


Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect ~SGE! has been
unambiguously observed in ~001!-grown n-type GaAs quantum well structures in the absence of any external
magnetic field. Resonant intersubband transitions have been obtained making use of the tunability of the
free-electron laser FELIX. A microscopic theory of the SGE for intersubband transitions has been developed,
which is in good agreement with experimental findings.

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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2167
Owner only: item control page


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