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Resonant inversion of circular photogalvanic effect in n-doped quantum wells,
Ganichev, Sergey, Belkov, Vassilij, Schneider, Petra, Ivchenko, Eougenious, Tarasenko, Sergey, Schuh, Dieter, Wegscheider, Werner
, Weiss, Dieter, Prettl, Wilhelm und make_name_string expected hash reference
(2003)
Resonant inversion of circular photogalvanic effect in n-doped quantum wells,.
Physical Review B 68, 035319.
Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:37
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.2168
Zusammenfassung
We show that the sign of the circular photogalvanic effect can be changed by tuning the radiation frequency of circularly polarized light. Here resonant inversion of the photogalvanic effect has been observed for direct intersubband transition in n-type GaAs quantum well structures. This inversion of the photon helicity driven current is a direct consequence of the lifting of the spin degeneracy ...
We show that the sign of the circular photogalvanic effect can be changed by tuning the radiation frequency of circularly polarized light. Here resonant inversion of the photogalvanic effect has been observed for direct intersubband transition in n-type GaAs quantum well structures. This inversion of the photon helicity driven current is a direct consequence of the lifting of the spin degeneracy due to k-linear terms in the Hamiltonian in combination with energy and momentum conservation and optical selection rules.
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