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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-21722
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2172
Alternative Links zum Volltext:Verlag
Zusammenfassung
A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is shown that the CPGE becomes possible because of the built-in asymmetry of quantum wells (QWs) in compositionally stepped samples and in asymmetrically doped structures. The photocurrent arises due to optical spin orientation of free carriers in QWs with spin splitting in k-space. It is shown that ...
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