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Spin-photocurrent in p-SiGe quantum wells under terahertz laser irradiation

URN to cite this document:
urn:nbn:de:bvb:355-epub-21722
DOI to cite this document:
10.5283/epub.2172
Belkov, Vassilij ; Ganichev, Sergey ; Schneider, Petra ; Schowalter, D. ; Rössler, Ulrich ; Prettl, Wilhelm ; Ivchenko, Eougenious ; Neumann, Richard ; Brunner, K. ; Abstreiter, Gerhard
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Date of publication of this fulltext: 05 Aug 2009 13:37


Abstract

A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is shown that the CPGE becomes possible because of the built-in asymmetry of quantum wells (QWs) in compositionally stepped samples and in asymmetrically doped structures. The photocurrent arises due to optical spin orientation of free carriers in QWs with spin splitting in k-space. It is shown that ...

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