| PDF (127kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-21813
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2181
Zusammenfassung
A theoretical and experimental study of the tunneling ionization of deep impurities in semiconductors has been carried out for high-frequency alternating electric fields. It is shown that tunneling ionization occurs by phonon-assisted tunneling which proceeds at high electric field strengths into direct tunneling without involving phonons. In the quasistatic regime of low frequencies the ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Downloadstatistik