Tunneling ionization of deep centers in high-frequency electric fields

URN to cite this document:: urn:nbn:de:bvb:355-epub-21813
DOI to cite this document:: 10.5283/epub.2181

Ganichev, Sergey ; Ketterl, H. ; Perel, V. ; Yassievich, Irina ; Prettl, Wilhelm

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Abstract

A theoretical and experimental study of the tunneling ionization of deep impurities in semiconductors has been carried out for high-frequency alternating electric fields. It is shown that tunneling ionization occurs by phonon-assisted tunneling which proceeds at high electric field strengths into direct tunneling without involving phonons. In the quasistatic regime of low frequencies the ...