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Tunneling ionization of deep centers in high-frequency electric fields

Ganichev, Sergey, Ketterl, H., Perel, V., Yassievich, Irina and Prettl, Wilhelm (2002) Tunneling ionization of deep centers in high-frequency electric fields. Physical Review B 65 (8), 085203.

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/PRB2002tun.pdf


Abstract

A theoretical and experimental study of the tunneling ionization of deep impurities in semiconductors has been carried out for high-frequency alternating electric fields. It is shown that tunneling ionization occurs by phonon-assisted tunneling which proceeds at high electric field strengths into direct tunneling without involving phonons. In the quasistatic regime of low frequencies the ...

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Item type:Article
Date:February 2002
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1103/PhysRevB.65.085203DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2181
Owner only: item control page

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