Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Perel, V. and Prettl, Wilhelm (2001) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. Materials Science in Semiconductor Processing 4 (1-3), pp. 281-284.
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Abstract
Tunneling ionization in high-frequencyfields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probabilityallows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between ...
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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Date: | February 2001 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number: |
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| Keywords: | Deep impurities; Terahertz radiation; Tunneling | ||||
| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Yes, this version has been refereed | ||||
| Created at the University of Regensburg: | Yes | ||||
| Item ID: | 2194 |
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