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Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Perel, V. and Prettl, Wilhelm (2001) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. Materials Science in Semiconductor Processing 4 (1-3), pp. 281-284.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/materialscience2001p282_charact.pdf


Tunneling ionization in high-frequencyfields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probabilityallows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between ...


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Item type:Article
Date:February 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
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Keywords:Deep impurities; Terahertz radiation; Tunneling
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2194
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