Characterization of deep impurities in semiconductors by terahertz tunneling ionization

URN to cite this document:: urn:nbn:de:bvb:355-epub-21949
DOI to cite this document:: 10.5283/epub.2194

Ganichev, Sergey ; Ziemann, E. ; Yassievich, Irina ; Perel, V. ; Prettl, Wilhelm

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Abstract

Tunneling ionization in high-frequencyfields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probabilityallows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between ...