Go to content
UR Home

Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors

URN to cite this document:
DOI to cite this document:
Karch, J. ; Tarasenko, S. A. ; Ivchenko, E. L. ; Kamann, J. ; Olbrich, P. ; Utz, M. ; Kvon, Z. D. ; Ganichev, S. D.
PDF - Published Version
Date of publication of this fulltext: 07 Sep 2011 06:29


We demonstrate the injection of pure valley-orbit currents in multivalley semiconductors and present the phenomenological theory of this effect. We studied photoinduced transport in (111)-oriented silicon metaloxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, nonzero electron fluxes ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons