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Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors

Karch, J., Tarasenko, S. A., Ivchenko, E. L., Kamann, J., Olbrich, P., Utz, M., Kvon, Z. D. and Ganichev, S. D. (2011) Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors. Phys. Rev. B 83, p. 121312.

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Date of publication of this fulltext: 07 Sep 2011 06:29

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Other URL: http://link.aps.org/doi/10.1103/PhysRevB.83.121312


Abstract

We demonstrate the injection of pure valley-orbit currents in multivalley semiconductors and present the phenomenological theory of this effect. We studied photoinduced transport in (111)-oriented silicon metaloxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, nonzero electron fluxes ...

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Item type:Article
Date:March 2011
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Projects:SPP 1459: Graphene
Interdisciplinary Subject Network:Not selected
Identification Number:
ValueType
10.1103/PhysRevB.83.121312DOI
Related URLs:
URLURL Type
http://arxiv.org/abs/1010.4383Preprint
Classification:
NotationType
78.40.Fy, 72.40.+w, 73.40.Qv, 78.20.−ePACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:22034
Owner only: item control page

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