Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors

URN to cite this document:: urn:nbn:de:bvb:355-epub-220349
DOI to cite this document:: 10.5283/epub.22034

Karch, J. ; Tarasenko, S. A. ; Ivchenko, E. L. ; Kamann, J. ; Olbrich, P. ; Utz, M. ; Kvon, Z. D. ; Ganichev, S. D.

Preview

PDF - Published Version
(363kB)

Date of publication of this fulltext: 07 Sep 2011 06:29

Alternative links to fulltext:DOI Publisher

Details

Preview

Export bibliographical data

Abstract

We demonstrate the injection of pure valley-orbit currents in multivalley semiconductors and present the phenomenological theory of this effect. We studied photoinduced transport in (111)-oriented silicon metaloxide-semiconductor ﬁeld effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, nonzero electron ﬂuxes ...